The IN5819 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. The 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Features: Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are Pb−Free Devices Low profile, axial leaded outline High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free plating Specifications: Maximum Repetitive Peak Reverse Voltage (V) 40 Maximum RMS Voltage (V) 28 Maximum Average Forward Rectified Current (A) 1 Operating Junction Temperature (°C) – 65 to 125 Storage condition (℃) – 65 to 125 Package Includes: 1 x 1N5819 1W Schottky Barrier Diode *Product Images are shown for illustrative purposes only and may differ from actual product.
