The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Features: Extremely Low VF Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier Conduction Specifications: Maximum Repetitive Peak Reverse Voltage (V) 40 Maximum RMS Voltage (V) 28 Maximum Average Forward Rectified Current (A) 3 Operating Junction Temperature (°C) – 65 to 125 Storage condition (℃) – 65 to 125 Length (mm) 9 Width (mm) 5 (Body Diameter) Weight (gm) 1 (approx) (each) Package Includes: 1 x 1N5822 1W Schottky Diode. *Product Images are shown for illustrative purposes only and may differ from actual product.
