IRF3205 N-Channel HEXFET Power MOSFET TO-220 Package

The IRF3205 MOSFET from International Rectifier is 100V single N-channel HEXFET power MOSFET in the TO-220 package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications. Note: Image may vary from actual product in terms of Manufacturer/Brand name according to the availability.   Features: Gate to source voltage is ±20V. On-Resistance Rds(on) of 8mohm at Vgs of 10V. Power dissipation (Pd) of 130W at 25°C. Continuous drain current (Id) of 110A at Vgs 10V and 25°C. Operating junction temperature range from -55°C to 175°C. Applications: Power Management, Industrial, Portable Devices, Consumer Electronics. Specifications: Package/Case TO-220 Mounting Type Through Hole Product Series IRF3205 No. of Output 1 Output Type Analog Voltage Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 55V Continuous Drain Current (Id) 110A On – Drain-Source Resistance (Rds) 8mΩ Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 200 nC Power Dissipation(Pd) 200W Package Includes: 1 x IRF3205 N-Channel HEXFET Power MOSFET. *Product Images are shown for illustrative purposes only and may differ from actual product.