IRF640 MOSFET – 200V 18A N-Channel Power MOSFET TO-220 Package

IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W. Features: Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Specifications: Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 200V Continuous Drain Current (Id) 18A Drain-Source Resistance (Rds On) 0.15Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 70 nC Operating Temperature Range -55 ~ 150°C Power Dissipation (Pd) 150W Package Includes: 1 x IRF640 MOSFET – 200V 18AOS N-Channel Power MOSFET TO-220 Package. *Product Images are shown for illustrative purposes only and may differ from actual product.