Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features: Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Specifications: Type P-Channel Drain-Source Voltage (Vds) -55V Continuous Drain Current (Id) -19A Gate-Source Voltage (Vgs) 20V Operating Temperature Range -55°C to 175°C Power Dissipation (Pd) 68W Package Includes: 1 x IRF9Z34N P-Channel Power MOSFET TO-220 Package. *Product Images are shown for illustrative purposes only and may differ from actual product.
