IRF540 N-Channel HEXFET Power MOSFET TO-220 Package

IRF540N third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 130 W.  Features: Drain to source voltage Vds is 100V. Gate to source voltage is ±20V. Power dissipation Pd of 130W at 25°C. On Resistance Rds(on) of 44mohm at Vgs of 10V. Continuous drain current Id of 33A at Vgs 10V and 25°C. Operating junction temperature range from -55°C to 175°C. Applications: Power Management, Industrial, Portable Devices, Consumer Electronics. Specifications: Package/Case TO-220-3 Mounting Type Through Hole Product Series IRF540 Vds – Drain-Source Breakdown Voltage 100 V Id – Continuous Drain Current 33 A No. of Output 1 Output Type Analog Voltage Polarity N-Channel Dimensions in mm (LxWxH) 10 x 4.4 x 15.65 Rds On – Drain-Source Resistance 44 mOhms Vgs – Gate-Source Voltage 20 V Qg – Gate Charge 47.3 nC Pd – Power Dissipation 130 W Package Includes: 1 x IRF540 N-Channel HEXFET Power MOSFET TO-220 Package *Product Images are shown for illustrative purposes only and may differ from actual product.